advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 650v fast switching characteristic r ds(on) 2.4 simple drive requirement i d 4a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a e ar repetitive avalanche energy mj t stg t j operating junction temperature range thermal data symbol value units rthj-c thermal resistance junction-case max. 2 /w rthj-a thermal resistance junction-ambient max. 62 /w data & specifications subject to change without notice rohs-compliant product 200302072-1/6 ap04n70bp-a 100 -55 to 150 parameter 4 30 4 2.5 parameter rating 650 storage temperature range -55 to 150 15 62.5 linear derating factor 0.5 4 a p04n70 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. to-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. the to-220 package is universally preferred for all commercial- industrial applications. the device is suited for switch mode power supplies ,dc-ac converters and high current high speed switching circuits. g d s g d s to-220
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 650 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.6 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =2a - - 2.4 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 2.5 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 100 na q g total gate charge 3 i d =4a - 16.7 - nc q gs gate-source charge v ds =480v - 4.1 - nc q gd gate-drain ("miller") charge v gs =10v - 4.9 - nc t d(on) turn-on delay time 3 v dd =300v - 11 - ns t r rise time i d =4a - 8.3 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 23.8 - ns t f fall time r d =75 - 8.2 - ns c iss input capacitance v gs =0v - 950 - pf c oss output capacitance v ds =25v - 65 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.5v - - 4 a i sm pulsed source current ( body diode ) 1 --15 a v sd forward on voltage 3 t j =25 , i s =4a, v gs =0v - - 1.5 v notes: 1.pulse width limited by max. junction temperature. 2.starting tj=25 o c , v dd =50v , l=25mh , r g =25 , i as =4a. 3.pulse test 2/6 ap04n70bp-a
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature 3/6 ap04n70bp-a 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) v g =10v i d =2a 0 0.5 1 1.5 2 2.5 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =10v v g =6.0v v g =5.0v v g =4.5v v g =4.0v 0 0.5 1 1.5 2 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v v g =3.5v v g =4.5v v g =5.0v v g =6.0v v g =10v
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 4/6 ap04n70bp-a 0 20 40 0 50 100 150 t c , case temperature ( o c ) p d (w) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) 0.01 0.1 1 10 100 1 10 100 1000 10000 v ds (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 5/6 ap04n70bp- a 0 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd (v) i s (a) t j = 25 o c t j =150 o c 1 100 10000 1 6 11 16 21 26 31 v ds (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =320v v ds =400v v ds =480v
fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform 6/6 ap04n70bp-a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a
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